TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx?
Bottomless?
CoolFET?
CROSSVOLT ?
DenseTrench?
DOME?
EcoSPARK?
E 2 CMOS TM
EnSigna TM
FACT?
FACT Quiet Series?
FAST a
FASTr?
FRFET?
GlobalOptoisolator?
GTO?
HiSeC?
I 2 C?
ISOPLANAR?
LittleFET?
MicroFET?
MicroPak?
MICROWIRE?
OPTOLOGIC a
OPTOPLANAR?
PACMAN?
POP?
Power247?
PowerTrench a
QFET?
QS?
QT Optoelectronics?
Quiet Series?
SILENT SWITCHER a UHC?
SMART START? UltraFET a
SPM? VCX?
STAR*POWER?
Stealth?
SuperSOT?-3
SuperSOT?-6
SuperSOT?-8
SyncFET?
TinyLogic?
TruTranslation?
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD?S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or 2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Preliminary
No Identification Needed
Obsolete
Product Status
Formative or
In Design
First Production
Full Production
Not In Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H5
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相关代理商/技术参数
SI4435DY 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR MOSFET 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR, MOSFET
SI4435DY 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO
SI4435DY_Q 功能描述:MOSFET 30V SinGLE P-Ch RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4435DYPBF 功能描述:MOSFET 1 P-CH -30V HEXFET 20mOhms 40nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4435DYPBF 制造商:International Rectifier 功能描述:MOSFET ((NW))
SI4435DY-REVA 功能描述:MOSFET 30V 8A 2.5W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4435DY-REVA-E3 功能描述:MOSFET 30V 8A 2.5W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4435DY-T1 制造商:Vishay Siliconix 功能描述:MOSFET Transistor, P-Channel, SO